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ZXTP25100CFH датащи(PDF) 2 Page - Diodes Incorporated

номер детали ZXTP25100CFH
подробное описание детали  100V, SOT23, PNP medium power transistor
PDF  8 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP25100CFH датащи(HTML) 2 Page - Diodes Incorporated

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ZXTP25100CFH
Issue 2 - October 2007
2
www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-115
V
Collector-emitter voltage
VCEO
-100
V
Emitter-collector voltage (reverse blocking)
VECO
-7
V
Emitter-base voltage
VEBO
-7
V
Continuous collector current(a)
IC
-1
A
Base current
IB
-500
mA
Peak pulse current
ICM
-3
A
Power dissipation at Tamb = 25°C(a)
PD
0.73
W
Linear derating factor
5.84
mW/°C
Power dissipation at Tamb = 25°C(b)
PD
1.05
W
Linear derating factor
8.4
mW/°C
Power dissipation at Tamb = 25°C(c)
PD
1.25
W
Linear derating factor
9.6
mW/°C
Power dissipation at Tamb = 25°C(d)
PD
1.81
W
Linear derating factor
14.5
mW/°C
Operating and storage temperature range
Tj, Tstg
-55 to 150
°C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient(a)
R JA
171
°C/W
Junction to ambient(b)
R JA
119
°C/W
Junction to ambient(c)
R JA
100
°C/W
Junction to ambient(d)
R JA
69
°C/W



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