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ZXMP2120FF датащи(PDF) 4 Page - Diodes Incorporated

номер детали ZXMP2120FF
подробное описание детали  200V SOT23F P-channel enhancement mode MOSFET
PDF  10 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP2120FF датащи(HTML) 4 Page - Diodes Incorporated

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ZXMP2120FF
Issue 1 - January 2007
4
www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Max.
Unit Conditions
Static
Drain-source breakdown
voltage
V(BR)DSS
-200
V
ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS
-10
AVDS= -200V, VGS=0V
-100
A
VDS= -160V, VGS=0V, T=125C(‡)
Gate-body leakage
IGSS
20
nA
VGS=±20V, VDS=0V
Gate-source threshold voltage
VGS(th)
-1.5
-3.5
V
ID= 250 A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
RDS(on)
28
VGS= -10V, ID= -150mA
On-state drain current(*)
ID(on)
-300
mA
VDS= -25V, VGS=-10V
Forward transconductance(*) (‡) gfs
50
mS
VDS= -25V, ID= -150mA
Dynamic(‡)
Input capacitance
Ciss
100
pF
VDS= -25V, VGS=0V
f=1MHz
Output capacitance
Coss
25
pF
Reverse transfer capacitance
Crss
7pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time
td(on)
7ns
VDD= -25V, VGS= -10V
ID= -150mA
RSOURCE ≈ 50
Rise time
tr
15
ns
Turn-off delay time
td(off)
12
ns
Fall time
tf
15
ns



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