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ZXMP2120FF датащи(PDF) 2 Page - Diodes Incorporated

номер детали ZXMP2120FF
подробное описание детали  200V SOT23F P-channel enhancement mode MOSFET
PDF  10 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP2120FF датащи(HTML) 2 Page - Diodes Incorporated

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ZXMP2120FF
Issue 1 - January 2007
2
www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 pcb measured at t
5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
temperature.
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
-200
V
Gate-source voltage
VGS
± 20
V
Continuous drain current @ VGS= 10V; Tamb=25°C(a)
ID
-137
mA
Pulsed drain current(c)
IDM
-0.8
A
Pulsed source current (body diode)(c)
ISM
-0.8
A
Power dissipation at Tamb=25°C(a)
PD
1W
Linear derating factor
8
mW/°C
Power dissapation at Tamb=25°C(b)
PD
1.5
W
Linear derating factor
12.3
mW/°C
Operating and storage temperature range
Tj, Tstg
-55 to +150
°C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient(a)
R JA
125
°C/W
Junction to ambient(b)
R JA
81
°C/W



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