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LC651202F датащи(PDF) 22 Page - Sanyo Semicon Device |
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LC651202F датащи(HTML) 22 Page - Sanyo Semicon Device |
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22 / 35 page ![]() No. 5190-22/35 LC651204N/F/L, LC651202N/F/L Parameter Symbol Conditions Applicable pins/notes Ratings VDD (v) min typ max Unit CW When PE1 has open-drain output WDR 0.01±5% µF specifications Guaranteed RW When PE1 has open-drain output WDR 680±1% k Ω constants *7 specifications 3 to 5.5 Rl When PE1 has open-drain output WDR 100±1% Ω specifications Clear time (discharge) tWCT See Figure 7. WDR 10 µs Clear period (charge) tWCCY See Figure 7. WDR 3.0 ms CW When PE1 has open-drain output WDR 0.01±5% µF specifications Guaranteed RW When PE1 has open-drain output WDR 680±1% k Ω constants *7 specifications Rl When PE1 has open-drain output 4.5 to 5.5 WDR 100±1% Ω specifications Clear time (discharge) tWCT See Figure 7. WDR 10 µs Clear period (charge) tWCCY See Figure 7. WDR 3.3 ms Note: 1. When driven internally using the oscillator circuit shown in Figure 2 with guaranteed constants, values up to the amplitude of the generated oscillation are allowed. 2. The average over a 100-ms period 3. The operating power-supply voltage VDD must be maintained from the point where a HALT instruction is executed until the point where the device has fully entered the standby state. Also, applications must be designed so that no chattering (e.g. switch bounce) occurs on the PA3 pin during a HALT instruction execution cycle. 4. When external clock is selected as the oscillator option, the OSC1 pin has Schmitt characteristics. 5. The values shown for fCFOSC are the frequencies for which oscillation is possible. 6. Tcyc = 4 × the system clock period 7. If this device is used in an environment subject to condensation, extra care is required concerning leakage between PE1 and adjacent pins and leakage associated with external capacitors. Continued from preceding page. |
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