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2SC4685 датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали 2SC4685
подробное описание детали  Strobe Flash Applications Medium Power Amplifier Applications
PDF  4 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC4685 датащи(HTML) 3 Page - Toshiba Semiconductor

  2SC4685 Datasheet HTML 1Page - Toshiba Semiconductor 2SC4685 Datasheet HTML 2Page - Toshiba Semiconductor 2SC4685 Datasheet HTML 3Page - Toshiba Semiconductor 2SC4685 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC4685
2004-07-26
3
VBE (sat) – IC
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE (sat) – IC
IC – VCE
hFE – IC
Collector current IC (A)
Collector-emitter voltage VCE (V)
Safe Operating Area
0
0
4
8
1
2
4
5
IB = 0.5 mA
6
2
6
10
Common emitter
Ta = 25°C
40
5
50
3
30
20
10
2
0
0
4
0.2
0.8
1.0
Common emitter
VCE = 2 V
2
6
8
Ta = 125°C
25
−40
0.4
1.2
0.6
5
0.01
0.03
0.1
0.3
1
3
10
3
1
0.01
0.3
0.1
Common emitter
IC/IB = 200
Tc = 125°C
25
−40
0.03
Common emitter
IC/IB = 200
0.01
0.01
0.3
0.1
10
1
0.1
3
10
Tc = −40°C
25
125
3
1
0.03
0.03
0.3
100 ms*
IC max (pulsed)**
0.1
1
0.5
3
10
50
5
30
1
10
0.3
5
3
DC operation
Tc = 25°C
IC max (continuous)
10 ms*
*: Single nonrepetitive pulse
Tc = 25°C
**: Pulse width = 10 ms (max)
Duty cycle = 30% (max)
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
VCEO max
10000
100
0.01
Common emitter
VCE = 2 V
1000
3000
0.3
Tc = 125°C
25
−40
0.03
1
10
30
3
0.1
300
10



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