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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC4685 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC4685 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SC4685 2004-07-26 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4685 Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain: hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) • High collector power dissipation: PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V VCES 40 Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 8 V DC IC 5 Collector current Pulse (Note) ICP 8 A Base current IB 0.5 A Ta = 25°C 1.5 Collector power dissipation Tc = 25°C PC 10 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ― ― 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 20 ― ― V hFE (1) VCE = 2 V, IC = 0.5 A 800 ― 3200 DC current gain hFE (2) VCE = 2 V, IC = 4 A 250 ― ― Collector-emitter saturation voltage VCE (sat) IC = 4 A, IB = 40 mA ― ― 0.5 V Base-emitter voltage VBE VCE = 2 V, IC = 4 A ― ― 1.2 V Transition frequency fT VCE = 2 V, IC = 0.5 A ― 150 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 45 ― pF Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.82 g (typ.) |
Аналогичный номер детали - 2SC4685 |
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Аналогичное описание - 2SC4685 |
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