поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

DST847BPDP6 датащи(PDF) 3 Page - Diodes Incorporated

номер детали DST847BPDP6
подробное описание детали  COMPLEMENTARY DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DST847BPDP6 датащи(HTML) 3 Page - Diodes Incorporated

  DST847BPDP6 Datasheet HTML 1Page - Diodes Incorporated DST847BPDP6 Datasheet HTML 2Page - Diodes Incorporated DST847BPDP6 Datasheet HTML 3Page - Diodes Incorporated DST847BPDP6 Datasheet HTML 4Page - Diodes Incorporated DST847BPDP6 Datasheet HTML 5Page - Diodes Incorporated DST847BPDP6 Datasheet HTML 6Page - Diodes Incorporated DST847BPDP6 Datasheet HTML 7Page - Diodes Incorporated DST847BPDP6 Datasheet HTML 8Page - Diodes Incorporated  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
3 of 8
www.diodes.com
January 2010
© Diodes Incorporated
DST847BPDP6
Electrical Characteristics – Q1 NPN Transistor @TA = 25°C unless otherwise specified
Characteristic (Note 4)
Symbol
Min
Typical
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
50
150
-
V
IC = 10μA, IB = 0
Collector-Emitter Breakdown Voltage
V(BR)CES
50
150
-
V
IC = 10μA, IB = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
45
65
-
V
IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6
8.35
-
V
IE = 1μA, IC = 0
Collector-Base Cutoff Current
ICBO
-
-
15
nA
VCB = 30V
DC Current Gain
hFE
100
200
220
300
-
470
-
IC = 10μA, VCE = 5V
IC = 2.0mA, VCE = 5V
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
50
122
125
300
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(sat)
-
-
760
880
1000
1100
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage
VBE(on)
580
650
725
750
800
mV
IC = 2.0mA, VCE = 5V
IC = 10mA, VCE = 5V
Current Gain-Bandwidth Product
fT
100
175
-
MHz
VCE = 5V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance
Ccbo
-
1.5
-
pF
VCB = 10V, f = 1.0MHz
Notes:
4. Short duration pulse test used to minimize self-heating effect



Html Pages

1 2 3 4 5 6 7 8


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com