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DST847BPDP6 датащи(PDF) 5 Page - Diodes Incorporated

номер детали DST847BPDP6
подробное описание детали  COMPLEMENTARY DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  8 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DST847BPDP6 датащи(HTML) 5 Page - Diodes Incorporated

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DST847BPDP6
Document number: DS32036 Rev. 1 - 2
5 of 8
www.diodes.com
January 2010
© Diodes Incorporated
DST847BPDP6
Electrical Characteristics – Q2 PNP Transistor @TA = 25°C unless otherwise specified
Characteristic (Note 4)
Symbol
Min
Typical
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-50
-100
-
V
IC = -10μA, IB = 0
Collector-Emitter Breakdown Voltage
V(BR)CES
-50
-90
-
V
IC = -10μA, IB = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-45
-65
-
V
IC = -1mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
-8.5
-
V
IE = -1μA, IC = 0
Collector Cutoff Current
ICBO
-
-
-15
nA
VCB = -30V
DC Current Gain
hFE
100
200
340
330
-
470
-
IC = -10μA, VCE = -5V
IC = -2.0mA, VCE = -5V
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
-70
-300
-175
-500
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(sat)
-
-
-760
-885
-1000
-1100
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage
VBE(on)
-600
-
-670
-715
-780
-850
mV
IC = -2.0mA, VCE = -5V
IC = -10mA, VCE = -5V
Current Gain-Bandwidth Product
fT
100
340
-
MHz
VCE = -5V, IC = -10mA,
f = 100MHz
Output Capacitance
Cobo
-
2.0
-
pF
VCB = -10V, f = 1.0MHz
Notes:
4. Short duration pulse test used to minimize self-heating effect.



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