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LM3450 датащи(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
номер детали LM3450
подробное описание детали  LED Driver with Active Power Factor Correction and Phase Dimming Decoder
PDF  28 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM3450 датащи(HTML) 6 Page - National Semiconductor (TI)

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background image
Symbol
Parameter
Conditions
Min
(Note 4)
Typ
(Note 5)
Max
(Note 4)
Units
THERMAL SHUTDOWN
Thermal Limit Threshold
(Note 6)
160
°C
Thermal Limit Hysteresis
20
THERMAL RESISTANCE
θ
JA
Junction to Ambient
TSSOP-16
(Note 6, Note 7)
38.0
°C/W
θ
JC
Junction to Case
10.0
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation
of the device is guaranteed and do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical
Characteristics table. All voltages are with respect to the potential at the GND pin, unless otherwise specified.
Note 2: Refer to National’s packaging website for more detailed information and mounting techniques. http://www.national.com/analog/packaging/
Note 3: Human Body Model, applicable std. JESD22-A114-C. Machine Model, applicable std. JESD22-A115-A. Field Induced Charge Device Model, applicable
std. JESD22-C101-C.
Note 4: All limits guaranteed at room temperature (standard typeface) and at temperature extremes (bold typeface). All room temperature limits are 100%
production tested. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods. All limits are used
to calculate Average Outgoing Quality Level (AOQL).
Note 5: Typical numbers are at 25°C and represent the most likely norm.
Note 6: These electrical parameters are guaranteed by design, and are not verified by test.
Note 7: Junction-to-ambient thermal resistance is highly board-layout dependent. In applications where high maximum power dissipation exists, namely driving
a large MOSFET at high switching frequency from a high input voltage, special care must be paid to thermal dissipation issues during board design. In high-power
dissipation applications, the maximum ambient temperature may have to be derated. Maximum ambient temperature (T
A-MAX) is dependent on the maximum
operating junction temperature (T
J-MAX-OP = 125°C for Q1, or 150°C for Q0), the maximum power dissipation of the device in the application (PD-MAX), and the
junction-to ambient thermal resistance of the package in the application (
θ
JA), as given by the following equation: TA-MAX = TJ-MAX-OP – (θJA × PD-MAX).
www.national.com
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