MHVIC2115R2 datasheet(2/9 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MHVIC2115R2

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Driver Application

Stage 1, 26 Vdc, IDQ = 96 mA

(Pout = +0.2 W CW)

Stage 2, 26 Vdc, IDQ = 204 mA

Stage 3, 26 Vdc, IDQ = 111 mA

Output Application

Stage 1, 27 Vdc, IDQ = 56 mA

(Pout = +2.5 W CW)

Stage 2, 27 Vdc, IDQ = 61 mA

Stage 3, 27 Vdc, IDQ = 117 mA

RθJC

3.5

2.7

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M1 (Minimum)

Charge Device Model

C2 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

240

°C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

W-CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA,

Pout = 23 dBm, 2110-2170 MHz

Power Gain

Gps

—

Gain Flatness

—

0.3

0.5

Input Return Loss

IRL

—

-12

-10

Group Delay

—

1.7

—

Phase Linearity

—

0.2

—

1-Carrier W-CDMA Conditions: Adjacent Channel Power Ratio

@ Pout = 23 dBm, 5 MHz Offset

ACPR

—

-53

-50

dBc

1-Carrier W-CDMA Conditions: Adjacent Channel Power Ratio

@ Pout = 28 dBm, 5 MHz Offset

ACPR

—

-50

—

dBc

W-CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 56 mA, IDQ2 = 61 mA, IDQ3 = 117 mA,

Pout = 34 dBm, 2110-2170 MHz

Power Gain

Gps

—

Gain Flatness

—

0.2

—

Input Return Loss

IRL

—

-12

—

Power Added Efficiency

PAE

—

1-Carrier W-CDMA Conditions: Adjacent Channel Power Ratio

@ Pout = 34 dBm, 4 MHz Offset

ACPR

—

-45

—

dBc

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

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