Replaced by MHVIC2115NR2. There are

no form, fit or function changes with this

part replacement. N suffix indicates RoHS

compliant part.

MHVIC2115R2

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RF Device Data

Freescale Semiconductor

RF LDMOS Wideband Integrated

Power Amplifier

The MHVIC2115R2 wideband integrated circuit is designed for base station

applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS

IC technology and integrates a multi-stage structure. Its wideband On-Chip

matching design makes it usable from 1600 to 2600 MHz. The linearity

performances cover W-CDMA modulation formats.

Final Application

3GPP Test Model 1, Measured in a 1.0 MHz BW @ 4 MHz offset, 64 DTCH

Power Gain — 30 dB

PAE = 16%

Driver Application

3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz offset, 64 DTCH

Power Gain — 34 dB

• Gain Flatness = 0.3 dB from 2110-2170 MHz

• P1dB = 15 Watts, Gain Flatness = 0.2 dB from 2110-2170 MHz

• Capable of Handling 3:1 VSWR, @ 26 Vdc, 2140 MHz, 15 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

• Integrated Temperature Compensation with Enable/Disable Function

• Integrated ESD Protection

• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, +15

Vdc

Storage Temperature Range

- 65 to +150

°C

Operating Junction Temperature

150

°C

16

15

14

13

12

11

10

1

2

3

4

5

6

7

8

(Top View)

9

N.C.

N.C.

N.C.

Quiescent Current

Temperature Compensation

Note: Exposed backside flag is source

terminal for transistors.

Figure 1. Block Diagram

Figure 2. Pin Connections

Document Number: MHVIC2115R2

Rev. 4, 8/2006

Freescale Semiconductor

Technical Data

MHVIC2115R2

CASE 978-03

PFP -16

2170 MHz, 26 V, 23/34 dBm

W-CDMA

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIER

16

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© Freescale Semiconductor, Inc., 2006. All rights reserved.