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1

12/18/08

IRFS5615PbF

IRFSL5615PbF

Notes

DIGITAL AUDIO MOSFET

Features

• Key Parameters Optimized for Class-D Audio

Amplifier Applications

Efficiency

• 175°C Operating Junction Temperature for

Ruggedness

• Can Deliver up to 300W per Channel into 4Ω Load in

Half-Bridge Configuration Amplifier

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes

the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode

reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance

factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction

temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,

robust and reliable device for ClassD audio amplifier applications.

S

D

G

GD

S

Gate

Drain

Source

S

D

G

D

D

S

G

IRFS5615PbF

TO-262

IRFSL5615PbF

PD - 96204

150

V

34.5

m

:

26

nC

11

nC

2.7

Ω

175

°C

Key Parameters

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

Gate-to-Source Voltage

Pulsed Drain Current c

Power Dissipation

f

Power Dissipation f

Linear Derating Factor

W/°C

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case f

–––

1.045

Junction-to-Ambient (PCB Mount)

h

–––

40

°C/W

°C

A

V

W

144

72

0.96

-55 to + 175

300

Max.

24

140

±20

150

33