IRFS/SL5615PbF

4

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 10. Threshold Voltage vs. Temperature

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD, Source-to-Drain Voltage (V)

1.0

10

100

1000

TJ = 25°C

TJ = 175°C

VGS = 0V

-75 -50 -25 0

25 50 75 100 125 150 175

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

ID = 100µA

ID = 250uA

ID = 1.0mA

ID = 1.0A

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

τ

J

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

Ci

i

/Ri

Ci=

τi/Ri

τ

τ

C

τ

4

τ

4

R

4

R

4

Ri (°C/W)

τi (sec)

0.02324

0.000008

0.26212

0.000106

0.50102

0.001115

0.25880

0.005407

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

OPERATION IN THIS AREA

LIMITED BY RDS(on)

Tc = 25°C

Tj = 175°C

Single Pulse

100µsec

1msec

10msec

DC

25

50

75

100

125

150

175

TC , Case Temperature (°C)

0

5

10

15

20

25

30

35

40