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BGF113 датащи(PDF) 5 Page - Infineon Technologies AG

номер детали BGF113
подробное описание детали  Differential Microphone Filter and ESD Protection
PDF  7 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BGF113 датащи(HTML) 5 Page - Infineon Technologies AG

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Table 1
Maximum Ratings
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Voltage at all pins to GND
V
P
0
4
V
Operating temperature range
T
OP
-40
85
°C
Storage temperature range
T
STG
-65
150
°C
Input power at all pins
P
IN
60
mW
@ +70 °C
Contact discharge from pin B1 or C1 to GND
V
EXT
-15
15
kV
Contact discharge between all other pins
VINT
-2
2
kV
Table 2
Electrical Characteristics1)
1) at
T
A = 25 °C
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Resistor
R
1
R
1
1900
2000
2100
Resistor
R
2
R
2
800
1000
1200
Resistors
R
3, R4
R
3,4
1760
2200
2640
Resistors
R
5
R
5
20
25
30
Capacitors
C
1, C2
C
1,2
640
800
960
pF
Capacitors
C
3, C4
C
3,4
1000
1250
1500
pF
Leakage currents
ESD diodes to GND
I
R
0.1
0.1
100
100
nA
µA
V = ±3 V
V = ±14 V
Insertion loss
2) Insertion loss (see also Figure 2) strongly depends upon source and load impedance and GND connection on the circuit
board. For RF test purposes a 50
Ω environment is used.
2)
Pins B1 to B3 or C1 to C3
IL
20
dB
f = 0.1 ... 6 GHz
Z
S = ZL = 50 Ω
BGF113
Differential Microphone Filter and ESD Protection
BGF113
Data Sheet
5
V3.1, 2009-01-29
Electrostatic Discharge According to IEC61000-4-2



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