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BFP720F датащи(PDF) 18 Page - Infineon Technologies AG

номер детали BFP720F
подробное описание детали  C Heterojunction Wideband RF Bipolar Transistor
PDF  26 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP720F датащи(HTML) 18 Page - Infineon Technologies AG

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BFP720F
Electrical Characteristics
Data Sheet
18
Revision 1.0, 2009-03-13
Note:
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured results
High Linearity Operation Point
S
21
–10.5
–
I
C =13mA
Minimum Noise Figure
dB
Z
S = Zopt
Minimum Noise Figure
NF
min
–1.0
–
I
C =5mA
Associated Gain
G
ass
–10.5
–
I
C =5mA
Linearity
dBm
Z
S = ZL =50 Ω
1 dB Gain Compression Point
OP
1dB
–8
–
I
C =13mA
3rd Order Intercept Point
OIP
3
–19.5
–
I
C =13mA
Table 15
AC Characteristics,
V
CE = 3 V, f = 10 GHz (cont’d)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.



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