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BFP720F датащи(PDF) 13 Page - Infineon Technologies AG

номер детали BFP720F
подробное описание детали  C Heterojunction Wideband RF Bipolar Transistor
PDF  26 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP720F датащи(HTML) 13 Page - Infineon Technologies AG

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BFP720F
Electrical Characteristics
Data Sheet
13
Revision 1.0, 2009-03-13
5
Electrical Characteristics
5.1
DC Characteristics
5.2
General AC Characteristics
Table 5
DC Characteristics at
T
A =25°C
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Collector-emitter breakdown voltage
V
(BR)CEO
44.7
–
V
I
C =1mA, IB =0
Collector-emitter cutoff current
I
CES
––
30
μA
V
CE =13V, VBE =0 V
Collector-base cutoff current
I
CBO
––
100
nA
V
CB =5 V, IE =0
Emitter-base cutoff current
I
EBO
––
2
μA
V
EB =0.5 V, IC =0
DC current gain
h
FE
160
250
400
I
C =13mA, VCE =3V
pulse measured
Table 6
AC Characteristics at
T
A =25°C
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Transition frequency
f
T
–45
–
GHz
I
C =13mA, VCE =3V
f =1GHz
Collector-base capacitance
C
cb
–0.06
–
pF
V
CB =3 V, VBE =0 V
f =1MHz
emitter grounded
Collector-emitter capacitance
C
ce
–0.3
–
pF
V
CE =3 V, VBE =0 V
f =1MHz
base grounded
Emitter-base capacitance
C
eb
–0.3
–
pF
V
EB =0.5 V, VCB =0 V
f =1MHz
collector grounded



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