SPZB250 datasheet(9/18 Pages) STMICROELECTRONICS

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SPZB250

Electrical characteristics

Doc ID 13919 Rev 6

9/18

Electrical characteristics

5.1

DC electrical characteristics

5.2

DC I/O specification

Table 4.

DC electrical characteristics

Symbol

Parameter

Conditions

Values

Unit

Min.

Typ.

Max.

IRX

RX current (boost mode)

Vdd = 3.0 V, T = 25 °C

IRX

RX current (normal mode)

Vdd = 3.0 V, T = 25 °C

ITX

TX current (boost mode)

Vdd = 3.0 V, T = 25 °C

ITX

TX current (normal mode)

Vdd = 3.0 V, T = 25 °C

IDS

Deep sleep current

(RC oscillator)

2.1 < Vdd < 3.6 V

T = 25 °C

-2

μA

IDS

Deep sleep current

(32.768 kHz oscillator)

2.1 < Vdd < 3.6 V

T = 25 °C

-2

4.5

μA

Table 5.

DC input / output specification

Symbol

Parameter

Conditions

Values

Unit

Min.

Typ.

Max.

VIL

Low level input voltage

2.1 < Vdd < 3.6 V

0.2 x Vdd

VIH

High level input voltage

2.1 < Vdd < 3.6 V

0.8 x Vdd

Vdd

Iil

Input current for logic 0

2.1 < Vdd < 3.6 V

-0.5

Iih

Input current for logic 1

2.1 < Vdd < 3.6 V

0.5

Ripu

Input pull-up resistor

Ripd

Input pull-down resistor

VOL

Low level output voltage

0.18 x Vdd

VOH

High level output voltage

0.82 x Vdd

Vdd

IOHS

Output source current (GPIO 12: 0)

IOLS

Output sink current (GPIO 12: 0)

IOHH

Output source current (GPIO 16: 13)

IOLH

Output sink current (GPIO 16: 13)

IOTot

Total output current for I/O

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