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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TDF8590TH датащи(PDF) 26 Page - NXP Semiconductors |
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TDF8590TH датащи(HTML) 26 Page - NXP Semiconductors |
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26 / 30 page  TDF8590TH_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 23 April 2007 26 of 30 NXP Semiconductors TDF8590TH 2 × 80 W SE (4 Ω) or 1 × 160 W BTL (8 Ω) class-D amplifier f = 1 kHz. (1) VP = ±27 V; RL =4 Ω. (2) VP = ±18 V; RL =2 Ω. f = 1 kHz. (1) VP = ±27 V; RL =8 Ω. (2) VP = ±18 V; RL =4 Ω. a. SE application b. BTL application Fig 23. Efficiency as a function of output power Po (W) 0 100 80 40 60 20 001aad865 40 60 20 80 100 η (%) 0 (1) (2) Po (W) 0 200 160 80 120 40 001aad867 40 60 20 80 100 η (%) 0 (1) (2) f = 1 kHz. (1) VP = ±18 V; RL =2 Ω. (2) VP = ±27 V; RL =4 Ω. f = 1 kHz. (1) VP = ±18 V; RL =4 Ω. (2) VP = ±27 V; RL =8 Ω. a. SE application b. BTL application Fig 24. Power dissipation as a function of output power Po (W) 0 100 80 40 60 20 001aad864 10 20 30 P (W) 0 (1) (2) Po (W) 0 200 160 80 120 40 001aad866 20 10 30 40 P (W) 0 (1) (2) |
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