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TDF8590TH датащи(PDF) 24 Page - NXP Semiconductors |
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TDF8590TH датащи(HTML) 24 Page - NXP Semiconductors |
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24 / 30 page ![]() TDF8590TH_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 23 April 2007 24 of 30 NXP Semiconductors TDF8590TH 2 × 80 W SE (4 Ω) or 1 × 160 W BTL (8 Ω) class-D amplifier VP = ±27 V; RL =4 Ω; RS =0 Ω; Vripple = 2 V (p-p). (1) ripple on both supply lines, ripple in phase. (2) ripple on both supply lines, ripple in antiphase. (3) ripple on one supply line. VP = ±27 V; RL =8 Ω; RS =0 Ω; Vripple = 2 V (p-p). (1) ripple on one supply line. (2) ripple on both supply lines, ripple in antiphase. (3) ripple on both supply lines, ripple in phase. a. SE application b. BTL application Fig 19. Supply voltage ripple rejection as a function of frequency; Operating mode 001aad855 40 60 20 80 100 SVRR (dB) 0 f (kHz) 10−2 102 10 10−1 1 (1) (2) (3) 001aad858 60 50 70 80 SVRR (dB) 40 f (kHz) 10−2 102 10 10−1 1 (1) (2) (3) VI = 1 V (RMS). (1) SE application; VP = ±27 V; RL =4 Ω. (2) BTL application; VP = ±18 V; RL =4 Ω. Fig 20. Mute attenuation as a function of frequency 001aad859 40 60 20 80 100 αmute (dB) 0 f (kHz) 10−2 102 10 10−1 1 (1) (2) |
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