M16CSLASH5M datasheet(94/159 Pages) RENESAS

94 / 159 page

REJ03B0267-0101

Rev.1.01

Page 94 of 156

Jul 23, 2010

M16C/5M Group, M16C/57 Group

5. Electrical Characteristics

J-Version, VCC = 5 V

Note:

This indicates the memory in which the program to be executed exists.

Table 5.16

Electrical Characteristics (2)

Topr = −40°C to 85°C unless otherwise specified.

Symbol

Parameter

Measuring Condition

Standard

Unit

Min.

Typ.

Max.

ICC

Power Supply

Current

(VCC = 4.2V to 5.5

In single-chip

mode, the output

pins are open and

other pins are

VSS

High speed mode

f(BCLK) = 32 MHz,

XIN = 8 MHz (square wave), PLL multiply-by-8

125 kHz on-chip oscillator operates

f(BCLK) = 20 MHz,

XIN = 20 MHz (square wave),

125 kHz on-chip oscillator operates

f(BCLK) = 16 MHz,

XIN = 16 MHz (square wave),

125 kHz on-chip oscillator operates

40 MHz on-chip oscillator

mode

Main clock stops

40 MHz on-chip oscillator operates

125 kHz on-chip oscillator operates

No division

Main clock stops

40 MHz on-chip oscillator operates

125 kHz on-chip oscillator operates

Divide-by-8

6mA

125 kHz on-chip oscillator

mode

Main clock stops

40 MHz on-chip oscillator stops

125 kHz on-chip oscillator operates

Divide-by-8

FMR22 = FMR23 = 1 (Low-current

consumption read mode)

190

580

μA

Low power mode

f(BCLK) = 32 kHz

On Flash memory (2)

FMR22 = FMR23 = 1 (Low-current

consumption read mode)

200

μA

Wait mode

Main clock stops

40 MHz on-chip oscillator stops

125 kHz on-chip oscillator operates

Peripheral clock operates

Topr = 25°C

μA

Main clock stops

40 MHz on-chip oscillator stops

125 kHz on-chip oscillator operates

Peripheral clock operates

Topr = 85°C

μA

Stop mode

Topr = 25°C

315

μA

Topr = 85°C

μA

During flash memory

program

f(BCLK) = 10 MHz, PM17 = 1 (one wait)

VCC = 5.0 V

20.0

During flash memory

erase

f(BCLK) = 10 MHz, PM17 = 1 (one wait)

VCC = 5.0 V

30.0

Idet2

Low Voltage Detection Dissipation Current

μA

Idet0

Reset Area Detection Dissipation Current

μA

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