M16CSLASH5M datasheet(89/159 Pages) RENESAS

89 / 159 page

REJ03B0267-0101

Rev.1.01

Page 89 of 156

Jul 23, 2010

M16C/5M Group, M16C/57 Group

5. Electrical Characteristics

J-Version

5.1.6

E2PROM Emulation Data Flash

Notes:

Definition

of program/erase cycles definition

This value represents the number of erasure per block.

If the flash memory is programmed/erased n times, each block can be erased n times.

i.e. If a word write is performed in different 16 addresses in a block and then the block is erased, it

is considered the programming/erasure is performed just once. However a write in the same

address more than once for one erasure is disabled. (overwrite disabled).

The data hold time includes the periods when the supply voltage is not applied and no clock is

provided.

This data hold time includes (7000) hours in Ambient temperature = 85°C.

Please contact a Renesas Electronics sales office regarding data retention time other than the

above.

Table 5.9

E2PROM Emulation Data Flash Electrical Characteristics

VCC = 3.0 to 5.5 V, VSS = 0 V, and Topr = -40°C to 85°C unless otherwise specified.

Symbol

Characteristic

Value

Unit

Min.

Typ.

Max.

—

Program/erase cycles (1)

100000

times

—

Word program time (2-byte program)

100

2000

µs

—

Read time (2-byte read)

µs

—

Block erase time (32-byte block)

200

tPS

Flash memory circuit stabilization wait time

(sleep mode to normal mode)

µs

—

Data hold time (2)

Ambient temperature = 55°C (3, 4)

years

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