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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GND
LMATCH
GND
VCC
GND1
RF IN
GND
BIAS1
BIAS2
NC
RF OUT
RF OUT
RF OUT
NC
NC
VPC
BIAS
CIRCUITS
PACKAGE BASE
GND
RF2119
HIGH EFFICIENCY 2V POWER AMPLIFIER
•Two-Way Pagers
• 915MHz ISM Band Equipment
• Spread-Spectrum Systems
• 3V AMPS/ETACS Cellular Handsets
• CDPDPortableDataCards
• Personal Digital Cellular
The RF2119 is a high-power, high-efficiency amplifier IC
targeting 2V to 4 V handheld systems. The device is man-
ufactured on an advanced Gallium Arsenide Heterojunc-
tion Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 960MHz band. The
device is well suited for either CW or pulsed applications.
At 3 V, the RF2119 can deliver 29.5dBm of linear output
power. The device is self-contained with 50
Ω input and
the output can be easily matched to obtain optimum
power, efficiency, and linearity characteristics. The pack-
age is a PSSOP-16 with backside ground.
• Single 2V to 5V Supply
• 30dBm Output Power at 2.5V
• 30dB Small Signal Gain
• 53% Efficiency
• On-board Power Down Mode
• 800MHz to 960MHz Operation
RF2119
High Efficiency 2V Power Amplifier
RF2119 PCBA
Fully Assembled Evaluation Board
2
Rev A8 010720
0.05 ± 0.05 3
-A-
0.25 ± 0.05
0.635
1.40 ± 0.10
Exposed
Heat Sink
3
2.70 ± 0.10
1.70 ± 0.10
3.90
±0.10
4.90 ± 0.10
6.00 ± 0.20
0.60 ± 0.15
8° MAX
0° MIN
0.24
0.20
Package Style: PSSOP-16
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