MMSF3P02HD datasheet(3/8 Pages) ONSEMI

номер детали	MMSF3P02HD

подробное описание детали	Power MOSFET 3 Amps, 20 Volts P?묬hannel SO??

PDF	8 Pages

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производитель	ONSEMI [ON Semiconductor]

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MMSF3P02HD

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TYPICAL ELECTRICAL CHARACTERISTICS

0.2

0.4

0.6

0.8

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

1.6

1.8

2.2

2.4

3.4

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.4

0.6

123

0.05

0.07

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance versus

Gate−To−Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

0.80

1.20

100

1000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

TJ = 25°C

VDS ≥ 10 V

TJ = 100°C

°C

−55

°C

VGS = 0 V

ID = 1.5 A

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

ID = 3.0 A

1.2

3.7 V

3.1 V

2.5 V

2.6

1.4

1.6

1.8

2.8

3.2

0.2

678

10 V

−50

100

125

150

TJ = 125°C

0.09

0.06

0.90

1.00

1.10

0.08

2.7 V

2.9 V

VGS = 10 V

3.3 V

3.5 V

3.9 V

4.5 V

TJ = 25°C

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