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MMDF2P02HD датащи(PDF) 1 Page - ON Semiconductor

номер детали MMDF2P02HD
подробное описание детали  Power MOSFET 2 Amps, 20 Volts P?묬hannel SO??, Dual
PDF  8 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMDF2P02HD датащи(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 7
1
Publication Order Number:
MMDF2P02HD/D
MMDF2P02HD
Preferred Device
Power MOSFET
2 Amps, 20 Volts
P−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOS
t devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Features
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
• Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
20
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current − Continuous @ TA = 25°C
Drain Current − Continuous @ TA = 100°C
Drain Current − Single Pulse (tp ≤ 10 ms)
ID
ID
IDM
3.3
2.1
20
Adc
Apk
Total Power Dissipation, TA = 25°C (Note 2)
PD
2.0
W
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C (VDD = 20 Vdc,
VGS = 5.0 Vdc, IL = 6.0 Apk,
L = 18 mH, RG = 25 W)
EAS
324
mJ
Thermal Resistance, Junction−to−Ambient
(Note 2)
RqJA
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2
″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with
one die operating, 10 sec. max.
Source−1
1
2
3
4
8
7
6
5
Gate−1
Source−2
Gate−2
Drain−1
Drain−1
Drain−2
Drain−2
P−Channel
D
S
G
2 AMPERES, 20 VOLTS
RDS(on) = 160 mW
Device
Package
Shipping†
ORDERING INFORMATION
MMDF2P02HDR2
SO−8
2500 Tape & Reel
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
MMDF2P02HDR2G
SO−8
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SO−8, DUAL
CASE 751
STYLE 11
MARKING
DIAGRAM
D2P02 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
D2P02
AYWW
G
G
1
8
1
8


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