© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 7

1

Publication Order Number:

MMDFN02E/D

MMDF2N02E

Power MOSFET

2 Amps, 25 Volts

N−Channel SO−8, Dual

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. MiniMOS

t

devices are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applications

are dc−dc converters, and power management in portable and battery

powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass

storage products such as disk drives and tape drives. The avalanche

energy is specified to eliminate the guesswork in designs where

inductive loads are switched and offer additional safety margin against

unexpected voltage transients.

Features

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

25

Vdc

Gate−to−Source Voltage − Continuous

± 20

Vdc

3.6

2.5

18

Adc

Apk

2.0

W

Operating and Storage Temperature Range

−55 to 150

°C

Single Pulse Drain−to−Source Avalanche

245

mJ

Thermal Resistance, Junction−to−Ambient

(Note 1)

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 0.0625

″ from case for 10 seconds

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Mounted on 2

″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with

one die operating, 10 sec. max.

Source−1

1

2

3

4

8

7

6

5

Gate−1

Source−2

Gate−2

Drain−1

Drain−1

Drain−2

Drain−2

2 AMPERES, 25 VOLTS

Device

Package

ORDERING INFORMATION

MMDF2N02ER2

SO−8

2500 Tape & Reel

N−Channel

PIN ASSIGNMENT

D

S

G

http://onsemi.com

MMDF2N02ER2G

SO−8

(Pb−Free)

2500 Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Discrete

(Pb−Free)

SO−8

CASE 751

STYLE 11

MARKING

DIAGRAM

F2N02

= Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

F2N02

AYWW

G

G

1

8

1

8