PIC12C509AT-04SLASHIP datasheet(80/113 Pages) MICROCHIP

80 / 113 page

PIC12C5XX

DS40139E-page 80

13.1

DC CHARACTERISTICS:

PIC12C508A/509A (Commercial, Industrial, Extended)

PIC12CE518/519 (Commercial, Industrial, Extended)

PIC12CR509A (Commercial, Industrial, Extended)

DC Characteristics

Power Supply Pins

Standard Operating Conditions (unless otherwise specified)

Operating Temperature

°C ≤ TA ≤ +70°C (commercial)

–40

°C ≤ TA ≤ +85°C (industrial)

–40

°C ≤ TA ≤ +125°C (extended)

Parm

No.

Characteristic

Sym

Min

Typ(1)

Max

Units

Conditions

D001

Supply Voltage

VDD

3.0

5.5

FOSC = DC to 4 MHz (Commercial/

Industrial, Extended)

D002

RAM Data Retention

Voltage(2)

VDR

1.5*

Device in SLEEP mode

D003

VDD Start Voltage to ensure

Power-on Reset

VPOR

VSS

See section on Power-on Reset for details

D004

VDD Rise Rate to ensure

Power-on Reset

SVDD

0.05*

V/ms

See section on Power-on Reset for details

D010

D010C

D010A

Supply Current(3)

IDD

—

0.8

1.4

µA

XT and EXTRC options (Note 4)

FOSC = 4 MHz, VDD = 5.5V

INTRC Option

FOSC = 4 MHz, VDD = 5.5V

LP OPTION, Commercial Temperature

FOSC = 32 kHz, VDD = 3.0V, WDT disabled

LP OPTION, Industrial Temperature

FOSC = 32 kHz, VDD = 3.0V, WDT disabled

LP OPTION, Extended Temperature

FOSC = 32 kHz, VDD = 3.0V, WDT disabled

D020

D021

D021B

Power-Down Current (5)

IPD

—

0.25

µA

VDD = 3.0V, Commercial WDT disabled

VDD = 3.0V, Industrial WDT disabled

VDD = 3.0V, Extended WDT disabled

D022

Power-Down Current

∆IWDT

—

2.2

µA

VDD = 3.0V, Commercial

VDD = 3.0V, Industrial

VDD = 3.0V, Extended

Supply Current (3)

During read/write to

EEPROM peripheral

∆IEE

—

0.1

0.2

FOSC = 4 MHz, Vdd = 5.5V,

SCL = 400kHz

* These parameters are characterized but not tested.

Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25

°C. This data is for design guid-

ance only and is not tested.

2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus

loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on the

current consumption.

a) The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to

Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.

b) For standby current measurements, the conditions are the same, except that

the device is in SLEEP mode.

4: Does not include current through Rext. The current through the resistor can be estimated by the

formula: IR = VDD/2Rext (mA) with Rext in kOhm.

5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is mea-

sured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.

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