TPC8113 datasheet(3/7 Pages) TOSHIBA

номер детали	TPC8113

подробное описание детали	Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

PDF	7 Pages

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPC8113

2006-11-15

Electrical Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

µA

Drain cut-OFF current

IDSS

VDS = −30 V, VGS = 0 V

⎯

−10

µA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−30

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 20 V

−15

⎯

Gate threshold voltage

Vth

VDS = −10 V, ID = −1 mA

−0.8

⎯

−2.0

VGS = −4 V, ID = −5.5 A

⎯

Drain-source ON resistance

RDS (ON)

VGS = −10 V, ID = −5.5 A

⎯

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −5.5 A

⎯

Input capacitance

Ciss

⎯

4500

⎯

Reverse transfer capacitance

Crss

⎯

540

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

650

⎯

Rise time

⎯

Turn-ON time

ton

⎯

Fall time

⎯

120

⎯

Switching time

Turn-OFF time

toff

Duty <= 1%, tw = 10 µs

⎯

340

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

107

⎯

Gate-source charge 1

Qgs1

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− −24 V, VGS = −10 V,

ID = −11 A

⎯

Source-Drain Ratings and Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP

⎯

−44

Forward voltage (diode)

VDSF

IDR = −11 A, VGS = 0 V

⎯

1.2

VDD ∼− −15 V

0 V

VGS

−10 V

ID = −5.5 A

VOUT

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