TPC8113

2006-11-15

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

TPC8113

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to small and thin package

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−30

V

−30

V

Gate-source voltage

±20

V

DC

(Note 1)

−11

Drain current

Pulse (Note 1)

−44

A

Drain power dissipation (t

= 10 s)

(Note 2a)

1.9

W

Drain power dissipation (t

= 10 s)

(Note 2b)

1.0

W

Single pulse avalanche energy

(Note 3)

31.5

mJ

Avalanche current

−11

A

Repetitive avalanche energy

(Note 2a) (Note 4)

0.19

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1B

Weight: 0.080 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4