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PSMN012-100YS датащи(PDF) 1 Page - NXP Semiconductors

номер детали PSMN012-100YS
подробное описание детали  N-channel 100V 12m廓 standard level MOSFET in LFPAK
PDF  15 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

PSMN012-100YS датащи(HTML) 1 Page - NXP Semiconductors

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PSMN012-100YS
N-channel 100V 12m
Ω standard level MOSFET in LFPAK
Rev. 04 — 23 February 2010
Product data sheet
1.
Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
Tmb = 25 °C; see Figure 1
--60
A
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
130
W
Tj
junction temperature
-55
-
175
°C
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
VGS =10V; Tj(init) =25°C;
ID =60 A; Vsup ≤ 100 V;
RGS =50 Ω; unclamped
-
-
170
mJ
Dynamic characteristics
QGD
gate-drain charge
VGS =10V; ID =45 A;
VDS = 50 V; see Figure 14
and 15
-19
-
nC
QG(tot)
total gate charge
-
64
-
nC


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