PSMN012-100YS datasheet(3/15 Pages) NXP

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PSMN012-100YS_4

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Product data sheet

Rev. 04 — 23 February 2010

3 of 15

NXP Semiconductors

PSMN012-100YS

N-channel 100V 12m

Ω standard level MOSFET in LFPAK

Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

100

VDGR

drain-gate voltage

Tj ≥ 25 °C; Tj ≤ 175 °C; RGS =20kΩ

-100

VGS

gate-source voltage

-20

drain current

Tmb = 100 °C; see Figure 1

-43

Tmb =25°C; see Figure 1

-60

IDM

peak drain current

tp ≤ 10 µs; pulsed; Tmb =25°C; see Figure 3

-242

Ptot

total power dissipation

Tmb =25°C; see Figure 2

-130

Tstg

storage temperature

-55

175

°C

junction temperature

-55

175

°C

Tsld(M)

peak soldering

temperature

-260

°C

Source-drain diode

source current

Tmb =25°C

ISM

peak source current

tp ≤ 10 µs; pulsed; Tmb =25°C

242

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source avalanche

energy

VGS =10V; Tj(init) =25°C; ID =60A; Vsup ≤ 100 V;

RGS =50 Ω; unclamped

-170

Fig 1.

Continuous drain current as a function of

mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

003aad844

100

150

200

Tmb (

°C)

(A)

Tmb (°C)

200

150

100

03aa16

120

Pder

(%)

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