ADP1882ARMZ-1.0-R7 datasheet(4/40 Pages) AD

4 / 40 page

ADP1882/ADP1883

Rev. 0 | Page 4 of 40

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

OUTPUT DRIVER CHARACTERISTICS

High-Side Driver

Output Source Resistance

ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V)

3.5

Output Sink Resistance

ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V)

0.8

Rise Time2

tR, DRVH

BST − SW = 4.4 V, CIN = 4.3 nF (see Figure 60)

Fall Time2

tF, DRVH

BST − SW = 4.4 V, CIN = 4.3 nF (see Figure 61)

Low-Side Driver

Output Source Resistance

ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V)

1.7

Output Sink Resistance

ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V)

0.75

Rise Time2

tR, DRVL

VDD = 5.0 V, CIN = 4.3 nF (see Figure 61)

Fall Time2

tF, DRVL

VDD = 5.0 V, CIN = 4.3 nF (see Figure 60)

Propagation Delays

DRVL Fall to DRVH Rise2

tTPDH, DRVH

BST − SW = 4.4 V (see Figure 60)

DRVH Fall to DRVL Rise2

tTPDH, DRVL

BST − SW = 4.4 V (see Figure 61)

SW Leakage Current

ISW, LEAK

BST = 25 V, SW = 20 V, VDD = 5.5 V

110

μA

Integrated Rectifier

Channel Impedance

ISINK = 10 mA

PRECISION ENABLE THRESHOLD

Logic High Level

VIN = 2.75 V to 20 V, VDD = 2.75 V to 5.5 V

235

285

330

Enable Hysteresis

VIN = 2.75 V to 20 V, VDD = 2.75 V to 5.5 V

COMP VOLTAGE

COMP Clamp Low Voltage

VCOMP(LOW)

From disable state, release COMP/EN pin to enable

device; 2.75 V ≤ VDD ≤ 5.5 V

0.47

COMP Clamp High Voltage

VCOMP(HIGH)

2.75 V ≤ VDD ≤ 5.5 V

2.55

COMP Zero Current Threshold

VCOMP_ZCT

2.75 V ≤ VDD ≤ 5.5 V

0.95

THERMAL SHUTDOWN

TTMSD

Thermal Shutdown Threshold

Rising temperature

155

°C

Thermal Shutdown Hysteresis

°C

Hiccup Current Limit Timing

1 The maximum specified values are with the closed loop measured at 10% to 90% time points (see

and

, CGATE = 4.3 nF, and the upper-side and lower-si

MOSFETs specified as Infineon BSC042N030MSG.

Figure 60

Figure 61)

2 Not automatic test equipment (ATE) tested.

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