PMGD780SN datasheet(5/14 Pages) NXP

5 / 14 page

PMGD780SN_2

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Product data sheet

Rev. 02 — 19 April 2010

5 of 14

NXP Semiconductors

PMGD780SN

Dual N-channel

μTrenchMOS standard level FET

6. Characteristics

Table 5.

Characteristics

Tj =25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 250 μA; VGS =0 V

Tj =25 °C

--V

Tj = −55 °C

--V

VGS(th)

gate-source threshold voltage

ID = 0.25 mA; VDS =VGS; Figure 9

Tj =25 °C

122.5

Tj =150 °C0.6

−−

Tj = −55 °C

−−

3.5

IDSS

drain leakage current

VDS =60 V; VGS =0 V

Tj =25 °C-

0.05 1

μA

Tj =150 °C

100

μA

IGSS

gate leakage current

VGS = ±20 V; VDS = 0 V

100

RDSon

drain-source on-state resistance

VGS =10 V; ID =0.3 A; Figure 7 and 8

Tj =25 °C

780

920

Tj =150 °C

1445 1700 m

VGS = 4.5 V; ID =0.075 A; Figure 7 and 8

-1100 1400 m

Dynamic characteristics

QG(tot)

total gate charge

ID =1 A; VDD =30V; VGS =10V; Figure 13

-1.05 -

QGS

gate-source charge

0.2

QGD

gate-drain charge

0.22 -

Ciss

input capacitance

VGS =0V; VDS = 30 V; f = 1 MHz; Figure 11

-23

Coss

output capacitance

Crss

reverse transfer capacitance

3.5

td(on)

turn-on delay time

VDD =30 V; RL =30 Ω; VGS =10 V; RG =6 Ω

-2

-ns

rise time

-4

-ns

td(off)

turn-off delay time

fall time

-2.2

-ns

Source-drain diode

VSD

source-drain voltage

IS = 0.3 A; VGS =0 V; Figure 12

0.83 1.2

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