PMGD780SN_2

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Product data sheet

Rev. 02 — 19 April 2010

2 of 14

NXP Semiconductors

PMGD780SN

Dual N-channel

μTrenchMOS standard level FET

3. Ordering information

4. Limiting values

[1]

Single device conducting.

Table 2.

Ordering information

Type number

Package

Name

Description

Version

PMGD780SN

SC-88

plastic surface-mounted package; 6 leads

SOT363

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage

25

60

V

drain-gate voltage

25

-60

V

gate-source voltage

-

±20

V

drain current

[1] -0.49

A

[1] -0.31

A

peak drain current

[1] -0.99

A

total power dissipation

-0.41

W

storage temperature

−55

+150

°C

junction temperature

−55

+150

°C

Source-drain diode

source current

[1] -0.34

A

peak source current

[1] -0.69

A