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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8S207MB датащи(PDF) 87 Page - STMicroelectronics |
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STM8S207MB датащи(HTML) 87 Page - STMicroelectronics |
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87 / 103 page  STM8S207xx, STM8S208xx Electrical characteristics Doc ID 14733 Rev 9 87/103 Electromagnetic interference (EMI) Emission tests conform to the SAE IEC 61967-2 standard for test software, board layout and pin loading. Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test conforms to the JESD22-A114A/A115A standard. For more details, refer to the application note AN1181. Table 48. EMI data Symbol Parameter Conditions Unit General conditions Monitored frequency band Max fHSE/fCPU (1) 8 MHz/ 8 MHz 8 MHz/ 16 MHz 8 MHz/ 24 MHz SEMI Peak level VDD = 5 V TA = 25 °C LQFP80 package conforming to SAE IEC 61967-2 0.1MHz to 30 MHz 15 20 24 dBµV 30 MHz to 130 MHz 18 21 16 130 MHz to 1 GHz -1 1 4 SAE EMI level SAE EMI level 2 2.5 2.5 1. Data based on characterization results, not tested in production. Table 49. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) 1. Data based on characterization results, not tested in production. Unit VESD(HBM) Electrostatic discharge voltage (Human body model) TA = 25°C, conforming to JESD22-A114 A2000 V VESD(CDM) Electrostatic discharge voltage (Charge device model) TA= 25°C, conforming to JESD22-C101 IV 1000 V |
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