поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

STM8S207MB датащи(PDF) 69 Page - STMicroelectronics

номер детали STM8S207MB
подробное описание детали  Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN
PDF  103 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8S207MB датащи(HTML) 69 Page - STMicroelectronics

Back Button STM8S207MB_10 Datasheet HTML 65Page - STMicroelectronics STM8S207MB_10 Datasheet HTML 66Page - STMicroelectronics STM8S207MB_10 Datasheet HTML 67Page - STMicroelectronics STM8S207MB_10 Datasheet HTML 68Page - STMicroelectronics STM8S207MB_10 Datasheet HTML 69Page - STMicroelectronics STM8S207MB_10 Datasheet HTML 70Page - STMicroelectronics STM8S207MB_10 Datasheet HTML 71Page - STMicroelectronics STM8S207MB_10 Datasheet HTML 72Page - STMicroelectronics STM8S207MB_10 Datasheet HTML 73Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 69 / 103 page
background image
STM8S207xx, STM8S208xx
Electrical characteristics
Doc ID 14733 Rev 9
69/103
10.3.5
Memory characteristics
RAM and hardware registers
Flash program memory/data EEPROM memory
General conditions: TA = -40 to 125 °C.
Table 35.
RAM and hardware registers
Symbol
Parameter
Conditions
Min
Unit
VRM
Data retention mode(1)
1.
Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
Halt mode (or reset)
VIT-max
(2)
2.
Refer to Table 19 on page 57 for the value of VIT-max.
V
Table 36.
Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min(1)
1.
Data based on characterization results, not tested in production.
Typ
Max
Unit
VDD
Operating voltage
(all modes, execution/write/erase)
fCPU ≤ 24 MHz
2.95
5.5
V
tprog
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
66.6
ms
Fast programming time for 1 block
(128 bytes)
33.3
ms
terase
Erase time for 1 block (128 bytes)
3
3.3
ms
NRW
Erase/write cycles(2)
(program memory)
2.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
TA = 85 °C
10 k
cycles
Erase/write cycles (data memory)(2)
TA = 125 ° C
300 k
1M
tRET
Data retention (program memory)
after 10 k erase/write cycles at
TA = 85 °C
TRET = 55° C
20
years
Data retention (data memory) after 10
k erase/write cycles at TA = 85 °C
TRET = 55° C
20
Data retention (data memory) after
300k erase/write cycles at
TA = 125 °C
TRET = 85° C
1
IDD
Supply current (Flash programming or
erasing for 1 to 128 bytes)
2mA



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com