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DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Simple drive requirement

80V

Lower gate charge

52m

Ω

Fast switching characteristics

4.6A

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

W/°C

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

62.5

°C/W

Rating

80

4.6

A

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

Continuous Drain Current

3

2.9

A

Pulsed Drain Current

1

30

2

W

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Linear Derating Factor

0.016

Storage Temperature Range

Thermal Data

Parameter

Total Power Dissipation

± 20

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SSM9980M is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters.

S1

G1

S2

G2

D1

D1

D2

D2

SO-8

G2

D2

S2

G1

D1

S1

SSM9980M/GM

12/10/2004 Rev.2.01

This device is available with Pb-free lead finish (second-level interconnect) as SSM9980GM.