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SSM9930M датащи(PDF) 6 Page - Silicon Standard Corp.

номер детали SSM9930M
подробное описание детали  DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
PDF  8 Pages
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производитель  SSC [Silicon Standard Corp.]
домашняя страница  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM9930M датащи(HTML) 6 Page - Silicon Standard Corp.

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SSM9930M
10/21/2004 Rev.1.01
P-channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage vs.
Reverse Diode
Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
V G = -10V
I D =-5A
0
5
10
15
20
25
01
2
3456
-V DS , Drain-to-Source Voltage (V)
T A =25
o C
-10V
-8.0V
-6.0V
-4.0V
V G =-3.0V
0
5
10
15
20
25
0123456
-V DS , Drain-to-Source Voltage (V)
T A =150
o C
-10V
-4.0V
-6.0V
-8.0V
V G =-3.0V
30
40
50
60
70
80
90
100
3
4
5
6
78
9
10
11
-V GS , Gate-to-Source Voltage (V)
I D =-5A
T A =2\5°C
0.01
0.10
1.00
10.00
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-V SD ,Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C
1
1.5
2
2.5
3
-50
0
50
100
150
T j ,Junction Temperature (
o C)



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