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SSM9930M датащи(PDF) 5 Page - Silicon Standard Corp.

номер детали SSM9930M
подробное описание детали  DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
PDF  8 Pages
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производитель  SSC [Silicon Standard Corp.]
домашняя страница  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM9930M датащи(HTML) 5 Page - Silicon Standard Corp.

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SSM9930M
10/21/2004 Rev.1.01
N-channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135°C/W
0.02
0
2
4
6
8
10
12
02
46
8
10
12
14
Q G , Total Gate Charge (nC)
I D =4.5A
V DS =15V
10
100
1000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
f=1.0MHz
Ciss
Coss
Crss
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge



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