N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

11/16/2007 Rev.1.00

www.SiliconStandard.com

1

SSM2602GY

PRODUCT SUMMARY

Capable of 2.5V gate drive

Lower on-resistance

Surface mount package

RoHS Compliant

DESCRIPTION

Advanced Power MOSFETs utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

The SOT-26 package is universally used for all commercial–industrial

applications.

ABSOLUTE MAXIMUM RATINGS

20V

34mΩ

6.3A

G

D

S

D

D

D

D

G

S

SOT-26

Pb-free; RoHS-compliant

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

62.5

℃/W

THERMAL DATA

Parameter

Storage Temperature Range

Total Power Dissipation

2

-55 to 150

Operating Junction Temperature Range

-55 to 150

Linear Derating Factor

0.016

Continuous Drain Current

5

Pulsed Drain Current

1,2

30

Gate-Source Voltage

±12

Continuous Drain Current

6.3

Parameter

Rating

Drain-Source Voltage

20