SSM2602GY datasheet(2/5 Pages) SSC

2 / 5 page

11/16/2007 Rev.1.00

www.SiliconStandard.com

ELECTRICAL CHARACTERISTICS

(TJ=25

C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=1mA

0.1

V/℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V, ID=5.5A

mΩ

VGS=4.5V, ID=5.3A

mΩ

VGS=2.5V, ID=2.6A

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

0.5

gfs

Forward Transconductance

VDS=5V, ID=5.3A

IDSS

Drain-Source Leakage Current (Tj=25oC)

VDS=20V, VGS=0V

Drain-Source Leakage Current (Tj=55oC)

VDS=16V ,VGS=0V

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge2

ID=5.3A

8.7

Qgs

Gate-Source Charge

VDS=10V

1.5

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

3.6

td(on)

Turn-on Delay Time2

VDS=15V

Rise Time

ID=1A

td(off)

Turn-off Delay Time

RG=2Ω,VGS=10V

18.4

Fall Time

RD=15Ω

2.8

Ciss

Input Capacitance

VGS=0V

603 1085

Coss

Output Capacitance

VDS=15V

144

Crss

Reverse Transfer Capacitance

f=1.0MHz

111

SOURCE-DRAIN DIODE

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

VSD

Forward On Voltage2

IS=1.2A, VGS=0V

1.2

trr

Reverse Recovery Time2

IS=5A, VGS=0V,

16.8

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on 1 in2 copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.

± 12V

100

SSM2602GY

SSM2602GY датащи(PDF) 2 Page - Silicon Standard Corp.

SSM2602GY датащи(HTML) 2 Page - Silicon Standard Corp.

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL