www.SiliconStandard.com

1 of 5

N-channel Enhancement-mode Power MOSFET

Low gate-charge

30V

Simple drive requirement

25m

Ω

Fast switching

28A

DESCRIPTION

G

D

S

G

D S

TO-263 (S)

G

D

S

TO-220(P)

The SSM40T03GS is in a TO-263 package, which is widely used for

commercial and industrial surface-mount applications. This device is

suitable for low-voltage applications such as DC/DC converters.

The through-hole version, the SSM40T03GP in TO-220, is available for

vertical-mounting, where a small footprint is required on the board, and/or

an external heatsink is to be attached.

ABSOLUTE MAXIMUM RATINGS

Symbol

Units

W/°C

Symbol

Value

Units

Maximum Thermal Resistance Junction-case

4

°C/W

Maximum Thermal Resistance Junction-ambient

62

°C/W

Parameter

Rating

Drain-Source Voltage

30

V

Gate-Source Voltage

±25

V

Continuous Drain Current

28

A

Continuous Drain Current

24

A

Pulsed Drain Current

1

95

A

Total Power Dissipation

31

W

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Linear Derating Factor

0.25

THERMAL DATA

Parameter

Storage Temperature Range

Pb-free, RoHS compliant.

SSM40T03GP,S

9/16/2005 Rev.3.1