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SS7646 датащи(PDF) 10 Page - Silicon Standard Corp. |
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SS7646 датащи(HTML) 10 Page - Silicon Standard Corp. |
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10 / 13 page ![]() www.SiliconStandard.com 4 of 5 SS7646 8/21/2004 Rev.2.01 Temperature Measurement The temperature measurement is based on an on-chip forward diode measurement. The forward diode voltage VBE has a well-defined characteristic vs. temperature. There are two measurement options for the SS7646, a Single Conversion Mode and a Differential Conversion Mode. (1) In the Single Conversion Mode, a diode voltage is first digitized at a fixed calibration temperature (25 °C) during the final test of the end product and this value T1 is stored in the memory, then only a single reading T2 is required for the users to obtain the am bient temperature through extrapolation from the calibration temperature diode result. This result assumes a diode temperature coefficient (TC) of approximately –2.1 mV/ °C. This method provides a resolution of approximately 0.3 °C and a predicted accuracy of ± 3 °C. This mode is achieved with an address setting of A2=0, A1=0, A0=0 (TEMP0). Please refer to Table III and Figure 8 for details. (2) The Differential Conversion Mode requires two points measurement to eliminate the need for absolute temperature calibration. The first measurement TEMP0 (A2=0, A1=0, A0=0) is performed with a fixed bias current into a diode and the second measurement TEMP1 (A2=1, A1=1, A0=1) is performed with N times (N=120 for SS7646) of the bias current into the same diode. The voltage difference between first and s ec ond r eadings is proportional to abs olute temperature and is given by the following formula: where V BE represents the diode voltage, N is the bias current multiple, k is Boltzmann’s constant and q is the electron charge. Taking Boltzmann’s constant k=1.38054x10 -23 electrons volts/degrees Kelvin, the electron charge q=1.602189x10 - 1 9 Coulomb, then the ambient temperature T, in degrees centigrade, would be calculated as follows: This method provides a much improved absolute measurement of temperature of ± 2 °C, however resolution is reduced to approximately 1.5 °C/LSB. /PENIRQ VDD ADC MUX 6 Channel X+ ON OFF OFF IN * I Figure 8. Block Diagram of Temperature Measurement Circuit ADC DC/DC Converter A2A1A0 (Shown 010) Battery 0V to 6V VBAT VDD ON ON 7.5K 2.5K Figure 9. Block Diagram of Battery Measurement Circuit ln(N) x ) q kT ( ∆VBE = C/LSB 0.3 Resolution 0.61mV 4096 2.5V LSB 1 ° = = = [] C T1)x0.3 (T2 25 C) T( ° − − = ° 273 - (mV) V x 2.42 C) T( ] ln(120) x [k V x (q K) T( BE BE) ∆ = ° ∆ = ° |
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