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APTM50AM38STG датащи(PDF) 6 Page - Microsemi Corporation

номер детали APTM50AM38STG
подробное описание детали  Phase leg Series & parallel diodes MOSFET Power Module
PDF  7 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM50AM38STG датащи(HTML) 6 Page - Microsemi Corporation

  APTM50AM38STG Datasheet HTML 1Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 2Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 3Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 4Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 5Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 6Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 7Page - Microsemi Corporation  
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APTM50AM38STG
www.microsemi.com
6 – 7
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
VGS=10V
ID=45A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
limited by RDSon
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
102030
4050
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
VDS=100V
VDS=250V
VDS=400V
0
2
4
6
8
10
12
14
0
40
80 120 160 200 240 280 320
Gate Charge (nC)
Gate Charge vs Gate to Source Voltage
ID=90A
TJ=25°C



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