APTM50AM38STG

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3 – 7

Parallel diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Maximum Peak Repetitive Reverse Voltage

600

V

500

Maximum Reverse Leakage Current

750

µA

DC Forward Current

90

A

1.8

2.2

2

Diode Forward Voltage

1.3

V

85

Reverse Recovery Time

160

ns

390

Reverse Recovery Charge

di/dt = 600A/µs

2100

nC

Thermal and package characteristics

Symbol Characteristic

Min

Typ

Max

Unit

Transistor

0.18

Junction to Case Thermal Resistance

Diode

0.45

°C/W

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500

V

Operating junction temperature range

-40

150

Storage Temperature Range

-40

125

Operating Case Temperature

-40

100

°C

Torque Mounting torque

To Heatsink

M5

2.5

4.7

N.m

Wt

Package Weight

160

g

Symbol Characteristic

Min

Typ

Max

Unit

Resistance @ 25°C

50

k

Ω

3952

K

























−

=

T

T

B

R

R

T

1

1

exp

25

85

/

25

25

T: Thermistor temperature