поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

HFP830 датащи(PDF) 2 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

номер детали HFP830
подробное описание детали  N-Channel Enhancement Mode Field Effect Transistor
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
домашняя страница  http://www.huashan.com.cn
Logo HUASHAN - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

HFP830 датащи(HTML) 2 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

  HFP830 Datasheet HTML 1Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD HFP830 Datasheet HTML 2Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD HFP830 Datasheet HTML 3Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD HFP830 Datasheet HTML 4Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD HFP830 Datasheet HTML 5Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD HFP830 Datasheet HTML 6Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
Shantou Huashan Electronic Devices Co.,Ltd.
█
Electrical Characteristics（Ta=25℃ unless otherwise specified）
Symbol
Items
Min. Typ. Max. Unit
Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
500
V
ID=250µA ,VGS=0V
25
µA
VDS =500V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
250
µA
VDS=400V, VGS=0V,Tj=125℃
IGSS
Gate – Body Leakage
±100
nA
VGS= ±20V , VDS =0V
On Characteristics
VGS(TH)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS , ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
1.5
Ω
VGS=10V, ID=2.5A
gFS
Forward Transconductance
2.5
S
VDS=40V, ID=2.5A
Dynamic Characteristics and Switching Characteristics
Ciss
Input Capacitance
800
pF
Coss
Output Capacitance
200
pF
Crss
Reverse Transfer Capacitance
60
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
Turn - On Delay Time
30
nS
tr
Rise Time
30
nS
td(off)
Turn - Off Delay Time
55
nS
tf
Fall Time
30
nS
VDD = 200 V, ID = 2.5Apk
RG= 15 Ω
Qg
Total Gate Charge
22
nC
Qgs
Gate–Source Charge
12
nC
Qgd
Gate–Drain Charge
10
nC
VDS=0.8VDSS, ID=4.5A,
VGS = 10 V
Drain-Source Diode Characteristics and Maximun Ratings
IS
Continuous Source–Drain Diode
Forward Current
4.5
A
ISM
Pulsed
Drain-Source
Diode
Forward Current
18
A
VSD
Source–Drain
Diode
Forward
On–Voltage
1.5
V
IS=4.5A,VGS=0
HFP830



Html Pages

1 2 3 4 5 6


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com