HFP830 datasheet(1/6 Pages) HUASHAN

номер детали	HFP830

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

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производитель	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

домашняя страница	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

N-Channel Enhancement Mode Field Effect Transistor

█

General Description

This Power MOSFET is produced using planar stripe, DMOS

technology. This latest technology has been especially designed to

minimize on-state resistance, have a high rugged avalanche

characteristics. This devices is specially well suited for half bridge

and full bridge resonant topolgy like a electronic lamp ballast.

█

Features

•

4.5A, 500V, RDS(on) = 1.5Ω@VGS = 10 V

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Equivalent Type:IRF830

█

Maximum Ratings（Ta=25℃ unless otherwise specified）

█

Thermal Characteristics

Symbol

Items

TO-220

Unit

Rthj-case

Thermal Resistance Junction-case

Max 1.71

℃

/W

Rthj-amb

Thermal Resistance Junction-ambient

Max 62.5

℃

/W

Rth c-s

Thermal Resistance Case-sink

Typ 0.5

℃

/W

Tstg——Storage Temperature ------------------------------------------------------ -55~150℃

Tj ——Operating Junction Temperature ---------------------------------------------- -55~150℃

VDSS —— Drain-Source Voltage ---------------------------------------------------------- 500V

VDGR —— Drain-Gate Voltage (RGS=1MΩ) --------------------------------------------------------- 500V

VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V

ID —— Drain Current (Continuous) ------------------------------------------------------------------- 4.5A

PD —— Maximum Power Dissipation -------------------------------------------------------------- 75W

IAR —— Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max, d < 1%) ---------------------------------------------------- 4.5 A

EAS—— Single Pulse Avalanche Energy

(starting Tj = 25℃, ID = IAR, VDD = 50 V) --------------------------------------------------270 mJ

EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) --------------- 7.3mJ

HFP830

TO-220

1- G 2-D 3-S

Аналогичный номер детали - HFP830

производитель	номер детали	датащи	подробное описание детали
List of Unclassifed Man...	HFP830	76Kb / 1P	N-Channel Enhancement Mode Field Effect Transistor
SemiHow Co.,Ltd.	HFP830	881Kb / 8P	500V N-Channel MOSFET

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Аналогичный номер детали - HFP830

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