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H5MS5122DFR датащи(PDF) 21 Page - Hynix Semiconductor |
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H5MS5122DFR датащи(HTML) 21 Page - Hynix Semiconductor |
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21 / 62 page ![]() Rev 1.2 / Jul. 2008 21 11 Mobile DDR SDRAM 512Mbit (16M x 32bit) H5MS5122DFR Series / H5MS5132DFR Series Mobile DDR OUTPUT SLEW RATE CHARACTERRISTICS Note: 1. Measured with a test load of 20pF connected to VSSQ 2. Output slew rate for rising edge is measured between VILD(DC) to VIHD(AC) and for falling edge between VIHD(DC) to VILD(AC) 3. The ratio of pull-up slew rate to pull-down slew rate is specified for the same temperature and voltage, over the entire temperature and voltage range. For a given output, it represents the maximum difference between pull-up and pull-down drivers due to process variation. Mobile DDR AC OVERSHOOT / UNDERSHOOT SPECIFICATION Note: 1. This specification is intended for devices with no clamp protection and is guaranteed by design. Parameter Min Max Unit Note Pull-up and Pull-Down Slew Rate for Full Strength Driver 0.7 2.5 V/ns 1, 2 Pull-up and Pull-Down Slew Rate for Half Strength Driver 0.3 1.0 V/ns 1, 2 Output Slew Rate Matching ratio (Pull-up to Pull-down) 0.7 1.4 - 3 Parameter Specification Maximum peak amplitude allowed for overshoot 0.5V Maximum peak amplitude allowed for undershoot 0.5V The area between overshoot signal and VDD must be less than or equal to 3V-ns The area between undershoot signal and GND must be less than or equal to 3V-ns 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V -0.5V Overshoot Undershoot VDD VSS Max. Amplitude = 0.5V Max. Area = 3V-ns Time (ns) |
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