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H5MS5122DFR датащи(PDF) 21 Page - Hynix Semiconductor

номер детали H5MS5122DFR
подробное описание детали  Mobile DDR SDRAM 512Mbit (16M x 32bit)
PDF  62 Pages
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производитель  HYNIX [Hynix Semiconductor]
домашняя страница  http://www.skhynix.com/kor/main.do
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H5MS5122DFR датащи(HTML) 21 Page - Hynix Semiconductor

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Rev 1.2 / Jul. 2008
21
11
Mobile DDR SDRAM 512Mbit (16M x 32bit)
H5MS5122DFR Series / H5MS5132DFR Series
Mobile DDR OUTPUT SLEW RATE CHARACTERRISTICS
Note:
1. Measured with a test load of 20pF connected to VSSQ
2. Output slew rate for rising edge is measured between VILD(DC) to VIHD(AC) and for falling edge between VIHD(DC) to VILD(AC)
3. The ratio of pull-up slew rate to pull-down slew rate is specified for the same temperature and voltage, over the entire temperature
and voltage range. For a given output, it represents the maximum difference between pull-up and pull-down drivers due to process
variation.
Mobile DDR AC OVERSHOOT / UNDERSHOOT SPECIFICATION
Note:
1. This specification is intended for devices with no clamp protection and is guaranteed by design.
Parameter
Min
Max
Unit
Note
Pull-up and Pull-Down Slew Rate for Full Strength Driver
0.7
2.5
V/ns
1, 2
Pull-up and Pull-Down Slew Rate for Half Strength Driver
0.3
1.0
V/ns
1, 2
Output Slew Rate Matching ratio (Pull-up to Pull-down)
0.7
1.4
-
3
Parameter
Specification
Maximum peak amplitude allowed for overshoot
0.5V
Maximum peak amplitude allowed for undershoot
0.5V
The area between overshoot signal and VDD must be less than or equal to
3V-ns
The area between undershoot signal and GND must be less than or equal to
3V-ns
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
-0.5V
Overshoot
Undershoot
VDD
VSS
Max. Amplitude = 0.5V
Max. Area = 3V-ns
Time (ns)



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