H5MS5122DFR datasheet(13/62 Pages) HYNIX

13 / 62 page

Rev 1.2 / Jul. 2008

Mobile DDR SDRAM 512Mbit (16M x 32bit)

H5MS5122DFR Series / H5MS5132DFR Series

COMMAND TRUTH TABLE

DM TRUTH TABLE

Note:

1. All states and sequences not shown are illegal or reserved.

2. DESLECT and NOP are functionally interchangeable.

3. Autoprecharge is non-persistent. A10 High enables Autoprecharge, while A10 Low disables Autoprecharge

4. Burst Terminate applies to only Read bursts with auto precharge disabled. This command is undefined and should not be used for

Read with Autoprecharge enabled, and for Write bursts.

5. This command is BURST TERMINATE if CKE is High and DEEP POWER DOWN entry if CKE is Low.

6. If A10 is low, bank address determines which bank is to be precharged. If A10 is high, all banks are precharged and BA0-BA1 are

don

't care.

7. This command is AUTO REFRESH if CKE is High, and SELF REFRESH if CKE is low.

8. All address inputs and I/O are

''don't care'' except for CKE. Internal refresh counters control Bank and Row addressing.

9. All banks must be precharged before issuing an AUTO-REFRESH or SELF REFRESH command.

10. BA0 and BA1 value select among MRS, EMRS and SRR.

11. Used to mask write data, provided coincident with the corresponding data.

12. CKE is HIGH for all commands shown except SELF REFRESH and DEEP POWER-DOWN.

Function

RAS

CAS

A10/AP ADDR Note

DESELECT (NOP)

NO OPERATION (NOP)

ACTIVE (Select Bank and activate Row)

Row

READ (Select bank and column and start read burst)

Col

READ with AP (Read Burst with Autoprecharge)

Col

WRITE (Select bank and column and start write

burst)

Col

WRITE with AP (Write Burst with Autoprecharge)

Col

BURST TERMINATE or enter DEEP POWER DOWN

4, 5

PRECHARGE (Deactivate Row in selected bank)

PRECHARGE ALL (Deactivate rows in all Banks)

AUTO REFRESH or enter SELF REFRESH

7,8,9

MODE REGISTER SET

Op code

Function

Note

Write Enable

Valid

Write Inhibit

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