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M16C/56D датащи(PDF) 77 Page - Renesas Technology Corp |
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M16C/56D датащи(HTML) 77 Page - Renesas Technology Corp |
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77 / 85 page ![]() REJ03B0307-0110 Rev.1.10 Dec 01, 2009 Page 77 of 83 M16C/5LD Group, M16C/56D Group 5. Electrical Characteristics VCC = 3 V Note: 1. This indicates the memory in which the program to be executed exists. Table 5.29 Electrical Characteristics (2) Topr = −40 to 85°C unless otherwise specified. Symbol Parameter Measuring Condition Standard Unit Min. Typ. Max. ICC Power Supply Current (VCC = 3.0 V to 3.6 V) In single-chip mode, the output pins are open and other pins are VSS High speed mode f(BCLK) = 25MHz, XIN = 8 MHz (square wave), PLL multiply-by-8 125-kHz on-chip oscillator operates 26 40 mA f(BCLK) = 20 MHz, XIN = 20 MHz (square wave), 125-kHz on-chip oscillator operates 19 28 mA f(BCLK) = 16 MHz, XIN = 16 MHz (square wave), 125-kHz on-chip oscillator operates 15 mA 125-kHz on-chip oscillator mode Main clock stops 125-kHz on-chip oscillator operates Divide-by-8 FMR22 = FMR23 = 1 (Low-current consumption read mode) 150 500 μA Low power mode f(BCLK) = 32 kHz On Flash memory (1) FMR22 = FMR23 = 1 (Low-current consumption read mode) 160 μA Wait mode Main clock stops 125-kHz on-chip oscillator operates Peripheral clock operates Topr = 25 °C 20 μA Main clock stops 125-kHz on-chip oscillator operates Peripheral clock operates Topr = 85°C 50 μA Stop mode Topr = 25°C 17 27 μA Topr = 85°C 45 μA During flash memory program f(BCLK) = 10 MHz, PM17 = 1 (one wait) VCC = 3.0 V 20.0 mA During flash memory erase f(BCLK) = 10 MHz, PM17 = 1 (one wait) VCC = 3.0 V 30.0 mA Idet2 Low Voltage Detection Dissipation Current 3 μA Idet0 Reset Area Detection Dissipation Current 6 μA |
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