IKCS12F60B2C datasheet(10/18 Pages) INFINEON

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CIPOS™ IKCS12F60B2A

IKCS12F60B2C

Data Sheet

10/18

Rev. 2.2, March 2009

Static Characteristics

(Tc = 25°C, VDD = 15V, if not stated otherwise)

Value

Description

Condition

Symbol

min

typ

max

Unit

Collector-Emitter breakdown

voltage

VIN = 5V, IC = 0.25mA

V(BR)CES

600

Collector-Emitter saturation voltage

VDD = 15V, Iout = +/- 6A

TvJ = 25°C

TvJ = 150°C

VCE(sat)

1.6

1.8

2.1

Diode forward voltage

VIN = 5V, Iout = +/- 6A

TvJ = 25°C

TvJ = 150°C

1.65

1.6

2.05

Zero gate voltage collector current

of IGBT

VCE = 600V, VGE = 5V

TvJ = 25°C

TvJ = 150°C

ICES

1000

µA

Short circuit collector current

VDD = 15V, tSC ≤ 5µs

VCC = 300V, Tj = 150°C

IC(SC)

Logic "0" input voltage (LIN,HIN)

VIH

1.7

2.1

2.4

Logic "1" input voltage (LIN,HIN)

VIL

0.7

0.9

1.1

ITRIP positive going threshold

VIT,TH+

360

460

540

ITRIP input hysteresis

VIT,HYS

VDD and VBS supply undervoltage

positive going threshold

VDDUV+

VBSUV+

11.0

12.1

12.8

VDD and VBS supply undervoltage

negative going threshold

VDDUV-

VBSUV-

9.5

10.4

VCC and VBS supply undervoltage

lockout hysteresis

VDDUVH

VBSUVH

1.2

1.7

Input clamp voltage (/HIN, /LIN)

IIN = 4mA

VINCLAMP

10.4

Input clamp voltage (ITRIP)

IIN = 4mA

VINCLAMP2

10.6

Quiescent VBx supply current (VBx

only)

VIN = low

IQB

300

550

µA

Quiescent VDD supply current

(VDD only)

VIN = float

IQDD

2.4

3.4

Input bias current

VIN = 5V

IIN+

100

µA

Input bias current

VIN = 0V

IIN-

220

400

µA

ITRIP Input bias current

VITRIP = 5V

IITRIP+

120

µA

Leakage current of high side

Tj,IC = 125°C

ILVS

µA

1 Allowed number of short circuits: <1000; time between short circuits: >1s.

2 Test is not subject of product test, verified by characterisation

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